| PART |
Description |
Maker |
| 5SHZ08F6000 |
Reverse Blocking Integrated Gate-Commutated Thyristor
|
The ABB Group
|
| P600M6A10 P600B6A1 P600A6A05 P600G6A4 P600G P600J |
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 1000V. Maximum RMS voltage 700V. Maximum DC blocking voltage 1000V
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 800V. Maximum RMS voltage 560V. Maximum DC blocking voltage 800V
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 600V. Maximum RMS voltage 420V. Maximum DC blocking voltage 600V
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 400V. Maximum RMS voltage 280V. Maximum DC blocking voltage 400V
SILICON RECTIFIER(VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 6.0 Amperes) 一般整流（电压范围- 50000伏特，电六点○安培）
|
WINGS[Wing Shing Computer Components]
Vishay Intertechnology, Inc.
|
| IXRH40N120 |
IGBT with Reverse Blocking capability
|
IXYS Corporation
|
| TIC116A TIC116B TIC116C TIC116D TIC116E TIC116M TI |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
|
Comset Semiconductor
|
| TIC108A TIC108B TIC108C TIC108D TIC108E TIC108M TI |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
|
Comset Semiconductor
|
| DGT409BCA6565 DGT409BCA |
Reverse Blocking Gate Turn-off Thyristor
|
DYNEX[Dynex Semiconductor]
|
| DGT304RE04 |
Reverse Blocking Gate Turn-off Thyristor
|
Dynex Semiconductor
|
| 2N3004 |
P-N-P-N PLANAR SILICON REVERSE-BLOCKING TRIODE THYRISTOR
|
New Jersey Semi-Conductor Products, Inc.
|
| TIC116A |
(TIC116x) P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
|
Comset Semiconductors
|
| MCR12L MCR12LD MCR12LNG MCR12LDG MCR12LM MCR12LMG |
Silicon Controlled Rectifiers Reverse Blocking Thyristors
|
ONSEMI[ON Semiconductor]
|
| MCR2505 MCR25NG MCR25D MCR25DG MCR25M MCR25MG MCR2 |
Silicon Controlled Rectifiers Reverse Blocking Thyristors
|
ONSEMI[ON Semiconductor]
|
| MCR16N MCR16NG MCR16 |
Silicon Controlled Rectifiers Reverse Blocking Thyristors
|
ONSEMI[ON Semiconductor]
|
